Semiconductors (ICANS)

M.M. de Jong, J.K. Rath, R.E.I. Schropp, P.J. Sonneveld, G.L.A.M. Swinkels, H.J. Holterman, J. Baggerman, C.J.M. Rijn, E.A.G. Hamers

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5 Citations (Scopus)

Abstract

We present a novel method to achieve light trapping in thin film silicon solar cells. Unlike the commonly used surface textures, such as Asahi U-type TCO, that rely on light scattering phenomena, we employ embossed periodically arranged micro-pyramidal structures with feature sizes much larger than the wavelength of visible light. Angular resolved transmission of light through these substrates indeed showed diffraction patterns. unlike in the case of Asahi U-type substrates, which show angular resolved scattering. Single junction amorphous silicon (a-Si) solar cells made at 125 degrees C on the embossed structured polycarbonate (PC) substrates showed an increase in current density by 24% compared to a similar solar cell on a flat substrate. The band gap and thickness of the i-layer made by VHF PECVD are 1.9 eV and 270 nm respectively. A double p-layer (nc-Si:H/a-Si:H) was used to make proper contact with ZnO:Al TCO. Numerical modeling, called DokterDEP was performed to fit the dark and light current-voltage parameters and understand the characteristics of the cell. The output parameters from the modeling suggest that the cells have excellent built-in potential (V-bi). However, a rather high recombination voltage, V-mu affects the FF and short circuit current density (J(sc)) for the cells on Asahi as well as for the cells on PC. A rather high parallel resistance >> M Omega cm(2) (obtained from the modeling) infers that there is no significant shunt leakage, which is often observed for solar cells made at low temperatures on rough substrates. An efficiency of more than 6% for a cell on PC shows enormous potential of this type of light trapping structures.
Original languageEnglish
Pages (from-to)2308-2312
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
DOIs
Publication statusPublished - 2012

Keywords

  • temperature

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    de Jong, M. M., Rath, J. K., Schropp, R. E. I., Sonneveld, P. J., Swinkels, G. L. A. M., Holterman, H. J., ... Hamers, E. A. G. (2012). Semiconductors (ICANS). Journal of Non-Crystalline Solids, 358(17), 2308-2312. https://doi.org/10.1016/j.jnoncrysol.2011.12.066