Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films

O. Yaffe, L.M.W. Scheres, S. Reddy Puniredd, N. Stein, A. Biller, R. Har Lavan, H. Shpaisman, H. Zuilhof, H. Haick, D. Cahen, A. Vilan

Research output: Contribution to journalArticleAcademicpeer-review

75 Citations (Scopus)

Abstract

Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
Original languageEnglish
Pages (from-to)2390-2394
JournalNano Letters
Volume9
Issue number6
DOIs
Publication statusPublished - 2009

Keywords

  • crystalline silicon surfaces
  • terminated si(111) surfaces
  • voltaic energy-conversion
  • linked organic monolayers
  • mis tunnel-diodes
  • alkyl monolayers
  • transport
  • deposition
  • quality
  • barrier

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    Yaffe, O., Scheres, L. M. W., Reddy Puniredd, S., Stein, N., Biller, A., Har Lavan, R., ... Vilan, A. (2009). Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films. Nano Letters, 9(6), 2390-2394. https://doi.org/10.1021/nl900953z