The invention relates to a method for producing a hybrid organic silicon field effect transistor structure, comprising the steps of: i) providing a group IV element based semiconductor substrate provided with a source region, gate region and drain region, having at least in the gate region a surface with hydrogen terminated group IV elements; and ii) covering at least the gate region with an organic monolayer by covalently reacting monolayer forming molecules with terminated hydrogen of the group IV elements at the surface, which monolayer forming molecules comprise a proximal terminated hydrogen reactive group and a spacer group and to a hybrid organic silicon field effect transistor structure as obtainable with the method.
|Publication status||Published - 27 Nov 2003|
Sudhölter, E. J. R., Zuilhof, H., Sieval, A. B., de Smet, L. C. P. M., Visser, G. M., Bergveld, P., ... Faber, E. J. (2003). Method for producing a hybrid organic silicon field effect transistor structure. (Patent No. WO03098204).