Abstract
Ultrahigh-capacity molecular AND gates provide the potential for the next-generation dynamic random access memory. The ferrocene-terminated monolayer on oxide-free silicon system allows a highly stable and independent switching with both light and potential, yielding precisely such an AND gate.
Original language | English |
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Pages (from-to) | 12024-12027 |
Journal | Angewandte Chemie-International Edition |
Volume | 52 |
Issue number | 46 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- hydrogen-terminated silicon
- oxide-free silicon
- information-storage
- alkyl monolayers
- charge-storage
- logic gates
- ferrocene
- vinylferrocene
- communication
- capacitance