Influence of the electro-optical properties of an α-Si:H single layer on the performances of a pin solar cell

I. Crupi*, F.S. Ruggeri, A. Grasso, F. Ruffino, G. Catania, A.M. Piro, S. Di Marco, S. Mirabella, F. Simone, F. Priolo

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependence of the activation energy to satisfy the Meyer-Neldel rule. Finally, the influence of the individual films parameters upon the final performances of a single junction pin α-Si:H have been studied. The measurements show how a more than doubled enhancement in energy conversion efficiency can be obtained in an α-Si:H solar cell with a proper selection of synthesis conditions.

Original languageEnglish
Pages (from-to)4036-4040
Number of pages5
JournalThin Solid Films
Volume520
Issue number11
DOIs
Publication statusPublished - 30 Mar 2012
Externally publishedYes

Keywords

  • Activation energy
  • Conductivity
  • Hydrogenated amorphous silicon
  • Optical gap
  • Quantum efficiency
  • Thin film solar cell

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