Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

O. Yaffe, Y. Qi, L.M.W. Scheres, S.R. Puniredd, L. Segev, T. Ely, H. Haick, H. Zuilhof, A. Vilan, L. Kronik, A. Kahn, D. Cahen

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47 Citations (Scopus)

Abstract

We compare the charge transport characteristics of heavy-doped p(++)- and n(++)-Si-alkyl chain/Hg junctions. Based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction we suggest that for both p(++)- and n(++)-type junctions, the energy difference between the Fermi level and lowest unoccupied molecular orbital (LUMO), i.e., electron tunneling, controls charge transport. This conclusion is supported by results from photoelectron spectroscopy (ultraviolet photoemission spectroscopy, inverse photoelectron spectroscopy, and x-ray photoemission spectroscopy) for the molecule-Si band alignment at equilibrium, which clearly indicate that the energy difference between the Fermi level and the LUMO is much smaller than that between the Fermi level and the highest occupied molecular orbital (HOMO). Furthermore, the experimentally determined Fermi level - LUMO energy difference, agrees with the non-resonant tunneling barrier height, deduced from the exponential length attenuation of the current.
Original languageEnglish
Article number045433
JournalPhysical Review. B : Condensed Matter and Materials Physics
Volume85
Issue number4
DOIs
Publication statusPublished - 2012

Keywords

  • self-assembled monolayers
  • electronic transport
  • molecular electronics
  • organic-molecules
  • chain monolayers
  • spectroscopy
  • polyethylene
  • conductance
  • films
  • photoemission

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